9728太阳集团·(中国)有限公司

SiC MOSFET discrete devices are suitable for hard-switching and resonant switching topologies such as power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters. Their excellent immunity to harmful parasitic on-state effects sets the benchmark for low dynamic losses, even at zero-volt turn-off voltages in bridge topologies. 1200 V Silicon Carbide MOSFET series are suitable for industrial applications such as industrial power supplies, charging pile power modules and uninterruptible power supplies (UPS).

SGKS SJMOS is produced and manufactured on 8-inch silicon wafers using a multiple epitaxial process. The superjunction structure MOSFETs are structured with multiple vertical pn junctions arranged at the D-terminal and S-terminal ends, and the result is a low on-resistance while maintaining a high voltage. The presence of superjunctions greatly exceeds the theoretical limits of silicon, and the higher the rated voltage, the more pronounced the drop in on-resistance.