9728太阳集团·(中国)有限公司

SJ MOSFET

SGKS SJMOS is produced and manufactured on 8-inch silicon wafers using a multiple epitaxial process. The superjunction structure MOSFETs are structured with multiple vertical pn junctions arranged at the D-terminal and S-terminal ends, and the result is a low on-resistance while maintaining a high voltage. The presence of superjunctions greatly exceeds the theoretical limits of silicon, and the higher the rated voltage, the more pronounced the drop in on-resistance.

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Product SKUs	Data Sheet	Breakdown Voltage	Drain-Source On-State Resistance	Continuous Drain Current	Non-Repetitive Forward Surge Current	Total Gate Charge	Package
K3J045065F-R		650V	45mΩ	62.6A	188A	142nC	TO-247-3L
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新品

K3J180065-T		650V	180mΩ	17.5A	53A	28nC	TO-220F-3L
K3J193060F-T		650V	193mΩ	18.2A	54.6A	31.9nC	TO-220F-3L
K3J193060F-A		600V	193mΩ	26A	54.6A	31.9nC	TO-220-3L
K3J280065-B		650V	280mΩ	12.5A	37.5A	21nC	TO-252-2L
K3J280065-T		650V	280mΩ	12.5A	37.5A	21nC	TO-220F-3L
K3J380065-B		650V	380mΩ	9.6A	28.8A	165nC	TO-252-2L
K3J380065-T		650V	380mΩ	9.6A	28.8A	16.5nC	TO-220F-3L
K3J1200065-T		650V	1200mΩ	3.4A	10.2A	5.9nC	TO-220F-3L

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